Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor

Koji Yano,Yasunori Tanaka,Masayuki Yamamoto

IEEE Electron Device Letters（2018）

引用 7|浏览5

暂无评分

摘要

A 35-A cascode configuration of a drain-tosource breakdown voltage of 978 V utilizing an silicon carbide (SiC) buried gate static induction transistor (BGSIT) and low voltage Si-MOSFET (SiC-BGSIT cascode) has been experimentally demonstrated for the first time. The SiC-SIT is mounted with the Si-MOSFET in an originally designed resin 4pin package. The ON-resistance RDS(ON) of this device exhibits ...

查看译文

关键词

Silicon carbide,Logic gates,MOSFET,JFETs,Switches,Switching loss,Static induction transistors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要