Lase Induced Fine Structure on Si by THz-FEL Irradiation

A. Irizawa,S. Suga,T. Nagashima,A. Higashiya,M. Hashida,S. Sakabe

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)（2018）

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摘要

We report the first observation of a laser induced periodic surface structure (LIPSS) by THz-FEL (THz free electron laser) irradiation on the surface of semiconductor Si. So far LIPSS has been studied only in NIR region by fs-laser, but LIPSS found in THz-FIR region by THz-FEL shows new features, such as, the fineness of the periodic interval is close to 1/25 of the wavelength.

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关键词

laser induced periodic surface structure,THz free electron laser,semiconductor Si surface,laser induced fine structure,THz-FIR region,fs-laser,NIR region,LIPSS,THz-FEL Irradiation,periodic interval,Si

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