Physical Properties of 1.3 μm InAs-Based Quantum Dot Laser on Silicon

Igor P. Marko,Aidas Baltusis, Alf R. Adams,Daehwan Jung,Justin C. Norman,John E. Bowers,Stephen J. Sweeney

2018 IEEE International Semiconductor Laser Conference (ISLC)（2018）

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摘要

The temperature performance of InAs/Si quantum dot lasers is studied using temperature-dependent characterization of the stimulated and spontaneous emission and discussed in terms of localization effects due to the inhomogeneity of the active region and the interplay of radiative and non-radiative recombination.

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关键词

Quantum dot lasers,III-V on silicon,temperature characterization,recombination processes

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