Wide-Input-Power Dynamic Range, 40-GHz Waveguide PIN Germanium Photodetector for Photonic Integrated Circuit

Ayahito Uetake,Nami Yasuoka,Teruo Kurahashi, Takuya Nakao, Yusuke Kurihara,Suguru Akiyama,Shinsuke Tanaka,Ken Morito

ECOC（2018）

引用 2|浏览15

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摘要

We fabricated waveguide germanium photodetectors (Ge-PDs) using silicon photonics technology at a commercial CMOS foundry. The fabricated Ge-PDs exhibited low dark current, high responsivity (1.1 A/W) and 40-GHz O/E response with TIA up to high input power of +5.8 dBm.

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关键词

wide-input-power dynamic range,photonic integrated circuit,silicon photonics technology,commercial CMOS foundry,low dark current responsivity,high input power,waveguide PIN germanium photodetector,frequency 40 GHz,Ge

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