Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi (Ni1-xPtxSi) contact formation was highlighted by implementing and characterizing the Ni1-xPtxSi films in the static random-access memory (SRAM) cells fabricated with a 28-nm design rule. MSA at 750 °C-900 °C effectively reduced the junction leakage current compared to that with the conventional rapid therma...