Drain Conductance Oscillations in Poly-Si Junctionless Nanowire Thin-Film Transistors

IEEE Transactions on Electron Devices（2019）

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摘要

The drain conductance oscillations are simultaneously observed in the trigated and double-gated polySi junctionless (JL) nanowire thin-film transistors (TFTs). The strongest oscillations appear at VGS of 1 V and VDS of 4-5 V/6-7 V in 0.35-μm/5-μm poly-Si JL nanowire TFTs. To explain the drain conductance oscillations, in addition to the separated sub-bands and Coulomb blockade effect, the space-ch...

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关键词

Oscillators,Silicon,Logic gates,Thin film transistors,Strips,Nanoscale devices

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