Effectively reducing the switching voltages based on CdS/ZnO heterostructure for resistive switching memory

Solid-State Electronics（2019）

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摘要

•The electrical property of CdS/ZnO heterostructure is investigated.•The switching voltages are significantly reduced and show good uniformity.•A feasible approach is proposed to effectively improve the performances of RRAM.

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关键词

Resistive switching,Failure behaviours,CdS/ZnO,Switching voltages

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