Microwave Generation by an Optoelectronic Oscillator with 1.55μm AlGaInAs/InP Microcavity Laser

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)(2018)

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摘要
We demonstrate the optoelectronic oscillator based on a 1.55 μ m direct-modulated AIGaInAs/InP microcavity laser for microwave generation. Single sideband phase noise of -116 dBc/Hz at 10kHz frequency offset is obtained for the generated signal.
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关键词
optoelectronic oscillator,microwave generation,single sideband phase noise,generated signal,direct-modulated AIGaInAs-InP microcavity laser,frequency 10.0 kHz,wavelength 1.55 mum,AlGaInAs-InP
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