A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare

Eduardo Oreia-Gigorro, Emilio Delgado Pascual,Juan Jose Sanchez-Martinez,Maria Luz Gil-Heras,Virginia Bueno-Fernandez,Antonio Bodalo-Marquez,Jesus Grajal

European Microwave Integrated Circuits Conference - Proceedings（2018）

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摘要

A 6-18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 mu m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.

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关键词

broadband amplifiers,high power amplifiers,impedance matching,microwave amplifiers,MMICs

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