An In-Memory-Computing Design of Multiplier Based on Multilevel-Cell of Resistance Switching Random Access Memory

Chinese Journal of Electronics(2018)

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摘要
Due to the Von Neumann bottleneck, in-memory-computing, as a new architecture, has drawn considerable attention and is becoming an candidate of next generation electronics system. It presents an inmemory-computing approach for multiplier design based on Multilevel-cell (MLC) of Resistive random access memories (RRAMs). The paper proposes a Look-up-table (LUT) operations to optimize the speed, area...
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关键词
multiplying circuits,resistive RAM,table lookup
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