Atomic step-flow epitaxy of low defect InGaAs islands on Si(1 1 1) by micro-channel selective area MOVPE

Yufeng Fu,Nobuyuki Otake, Yoshihide Tachino,Tohma Watanabe,Masakazu Sugiyama

Journal of Crystal Growth（2019）

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摘要

•Growth of InGaAs nucleation with single domain on Si(1 1 1).•Growth of InGaAs self-aligned pillar on Si(1 1 1).•Significant improvement in InGaAs islands’ crystal quality and uniformity.•Unique atomic step patterns on InGaAs (1 1 1) facet by AFM, demonstrating atomic layer by layer growth.•Free of threading dislocation.

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关键词

A1. Nucleation,A3. Metalorganic vapor phase epitaxy,A3. Selective epitaxy,B2. Semiconducting III-V materials

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