Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET

Phil Oldiges,Chen Zhang,Xin Miao,Myung Gil Kang,Tenko Yamashita

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2018）

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摘要

A simple inline measurement technique for extracting the individual resistance components of the source, drain, and channel on a single MOSFET device using DC measurements is proposed. Modeling data is used to prove the efficacy of the technique. This method can be applied to symmetric or asymmetric devices.

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关键词

parasitic resistance,device characterization

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