Quantitative Study Of The Effect Of Non-Uniform Irradiance On Module Performance Combining El And Dlit Imaging With Circuit Modeling

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)(2018)

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摘要
This paper presents a quantitative study of how the non-uniform irradiance from solar simulators and the often overlooked non-uniformities in modules (e.g. mismatched cell performance in a module, connection of cell strings, bypass diodes) affect the measurement accuracy in Si module power calibrations. By implementing spatial non-uniformity maps of solar simulators and experimental diode parameters of individual cells in a module to our circuit model, it enables a better understanding of the interaction of simulator irradiance non-uniformity with module imperfections in module power measurements. The comparison between simulation and experiment shows that with a nonuniform irradiance of 3%, the P-MAX deviations could be as low as similar to 0.5 % for good-quality Si modules, and similar to 2% for poor-quality Si modules, confirming the sensitivity of module power calibrations to module properties.
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关键词
nonuniform irradiance,solar simulators,Si module power calibrations,dark lock-in thermography imaging,electroluminescence imaging,DLIT imaging,EL imaging,Si
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