High throughput MOVPE and accelerated growth rate of GaAs for PV application

Akinori Ubukata,Hassanet Sodabanlu,Taketo Aihara,Ryuji Oshima,Takeyoshi Sugaya,Shuichi Koseki,Koh Matsumoto,Kentaroh Watanabe,Yoshiaki Nakano,Masakazu Sugiyama

Journal of Crystal Growth（2019）

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摘要

•The accelerated growth rate of GaAs up to 120 μm/h by MOCVD.•Cell performance of GaAs solar cells grown at 90 μm/h with various V/III ratio.•Demonstration of low deep emission with low-temperature PL characterization.

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关键词

A3. Metalorganic vapor phase epitaxy,B3. Solar cells,B2. Semiconducting GaAs,A1. Crystal morphology

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