Temperature Dependent Suns-V oc of Multicrystalline Silicon Solar Cells from Different Ingot Positions

This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence of ingot position for applications at elevated temperatures.