Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)(2017)
摘要
We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10
19
cm
-3
) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J
0e
) below 20 fA/cm
2
with Al
2
O
3
passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm
-3
. Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm
2
on boron-implanted bSi surfaces with nickel or aluminum contacts.
更多查看译文
关键词
black silicon,contact resistance,emitter,doping
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要