Optimization And Characterization Of Phosphorus Diffused Lpcvd Polysilicon Passivated Contacts With Low Pressure Tunnel Oxide

This work presents the investigation of low pressure in-situ thermal oxidation as the interfacial oxide for n+ polysilicon-oxide passivated contact structure, achieving excellent surface passivation below 1 fA.cm(-2) and contact resistivity below 1 m Omega.cm(2). The results from the process optimisation are presented in detail, showing the importance of accurate control of oxidation conditions, and presenting the correlation to the electrical properties. Additionally, a method of fabricating contact resistivity structures from symmetrical photoconductance decay lifetime samples, and the extraction of the specific contact resistivity using 3D numerical simulation is presented.