Plasma Oxidation Induced Ultra-Low Power Performance From A-Sinx:H Resistive Switching Memory

Dingwen Tan,Zhongyuan Ma,Xinxin Zhang,Xiaofan Jiang,Hui Zhang,Yang Sun, Wei Li,Ling Xu,Kunji Chen,Duan Feng

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2018）

引用 0|浏览15

暂无评分

摘要

a-Si0.28N0.21O0.51:H resistive switching memory (RRAM) with ultra-low power is obtained by plasma oxidation of a-Si0.48N0.52:H films in PECVD. It is found that the current of Al/a-Si0.28N0.21O0.051:H/Si device in the high and low resistance states is obviously lower than that of the Al/a-Si0.48N0.52:H/Si. Especially the current of the low resistance state reaches 10(-8) A when the read voltage is 0.5 V. Based on the analysis of XPS, we have investigated the origin of the ultra-low power resistive switching performance of Al/a-Si0.28N0.21O0.51 :H/Si device in detail.

查看译文

关键词

plasma oxidation,high resistance states,low resistance states,resistive switching memory,ultralow power resistive switching performance,voltage 0.5 V,SiNx:H,Al-Si0.28N0.21O0.51:H-Si,Al-Si0.48N0.52:H-Si

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要