Voltage-Driven Near Field Beam Shifting in an InP Photonic Integrated Circuit

A voltage-driven, continuously-tuned beam shifting device is proposed, simulated, and demonstrated in an InP photonic integrated circuit. Electrodes are applied on the left and right side of a mode-expanded waveguide to electronically control the refractive index profile and shift the optical beam by means of reverse bias voltage. The feasibility of a beam shifting of 4.9 μm with a power consumpti...