A Hammerstein–Wiener Model for Single-Electron Transistors
IEEE Transactions on Electron Devices(2019)
摘要
This paper proposes a new dynamic behavior model for single-electron transistors (SETs). A comprehensive review of modeling techniques and previous models was carried out aiming to remark the originality of the new proposed technique. Once established that SET is a nonlinear system, five classes of nonlinear models were simulated and compared to each other. Characteristic SET curves obtained using...
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关键词
Computational modeling,Mathematical model,Integrated circuit modeling,Tunneling,Data models,Monte Carlo methods,SPICE
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