Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses

Yuta Miyabe,Isato Ogawa,Mutsumi Kimura,Eisuke Tokumitsu,Kenichi Haga,Isao Horiuchi

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)（2018）

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摘要

We evaluated (Bi, La) ₄ Ti ₃ O ₁₂ (BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.

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关键词

(Bi, La)4Ti3O12(BLT),capacitor-type synapses,sol-gel method,Sawyer-Tower-Circuit

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