Tunable Photoluminescence of Atomically Thin MoS 2 via Nb Doping

The emergence of 2D materials has led to increased attention on correlating the structural, optical, and optoelectronic properties of atomically thin transition metal chalcogenides like MoS 2 . We demonstrate the tunability of the photoluminescence (PL) properties of bulk MoS 2 via implantation of Nb ions. Raman spectroscopy is used to confirm the p-type doping. The PL intensity of MoS 2 is drastically enhanced by the adsorption of p-type dopants. X-ray photoelectron spectroscopy (XPS) is used to study the change of MoS 2 structure postimplantation. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defect sites of MoS 2 created by Nb ion implantation may have promising applications in optoelectronic devices.