Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs

Auxiliary structure of nano-pinnacle is prepared on silicon substrate of SSI-LEDs device, and the micro-structure properties, electrical and optical characteristics of the proposed structure device are investigated. Non-uniform size and geometry of nano-pinnacles are prepared by wet-etching, and the most frequent geometry is ~230 × 140 nm pyramids. With help of the nano-pinnacle structure, the electric field strength distributed on treated surface of the nano-pinnacle sample is enhanced by ~4 times, resulting in the increase of the density of conductive paths by 3.6 times. By exploring the electrical and optical results, the onset voltage of light emission is decreased by 60% from − 7.6 V to − 3.4 V, and the emission intensity and efficiency are improved by ~9 times and ~8 times, respectively compared with the traditional structure device of SSI-LEDs.