Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. IXs were observed at room temperature in TMD heterostructure. However, the obstacle for exploring IX quantum gases and IX devices in TMD heterostructures is disorder. In particular, high disorder is revealed in a broad IX luminescence linewidth that can exceed 100 meV. Here we report on the realization of IXs in MoSe$_2$/WSe$_2$ heterostructures with a luminescence linewidth of 4 meV. We observed an order of magnitude enhancement of IX luminescence intensity and the narrow linewidth in a localized spot. The narrow linewidth made possible resolving low- and high-energy features of IX luminescence identified as the charged and neutral IX. The experimentally found binding energy of the indirect charged exciton, indirect trion, is 26 meV.