Effect Of Inas Quantum Dots Capped With Gaas On Atomic-Scale Ordering In Ga0.5in0.5p

The CuPt ordering of the group III elements in GaxIn1-xP (x similar or equal to 0.5) has been observed to vary during growth by metalorganic vapor-phase epitaxy of InAs quantum dots capped with GaAs in a GaInP matrix. While ordering is not affected by the insertion of a GaAs layer, the growth of InAs quantum dots capped with GaAs results in ordered, partially ordered, or fully disordered GaInP. We show that the degree of ordering depends on the deposition time of the InAs quantum dots and on the thickness of the GaAs capping layer. Our results indicate that disordered GaInP occurs in the presence of excess indium at the growth surface, which results from the growth of strained InAs quantum dots. Ordering resumes when the excess indium is consumed. Cathodoluminescence, scanning transmission electron microscopy, and atomic force microscopy are used in this study to correlate the electronic properties and the microstructure of the thin films.