Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy
Journal of Crystal Growth(2019)
摘要
•Slight variations in ultrathin AlN prelayers result in drastic GaN NW changes.•Increasing the AlN nominal thickness between 0 and 0.5 nm, doubles NW heights.•Simultaneous increase in NW height and decrease in diameter and density is found.
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关键词
A1. Interfaces,A1. Surface processes,A3. Molecular beam epitaxy,B1. Nitrides,B1. Nanomaterials,B2. Semiconducting gallium compounds
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