Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

This work exhibits the ability to shift the threshold voltage of an Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al0.3Ga0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 mu m gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high I-ON,I-MAX/I-OFF,I-MIN ratio of >10(9), and exceptionally low gate leakage current of 10(-6) mA/mm even under high forward bias of V-gs = 8V. Published by the AVS.