A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling

The TCAD framework developed in part-I of this paper is used to study the impact of fin length (FL) and fin width (FW) scaling on interface trap generation (ΔVIT) during negative bias temperature instability (NBTI) in FinFETs. Structure and mechanical stress are obtained by Sentaurus process. Sentaurus device having capture-emission depassivation (CED) and multistate configuration (MSC) models are...