Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy

Kent L. Averett,John B. Hatch,Kurt G. Eyink,Cynthia T. Bowers,Krishnamurthy Mahalingam

Journal of Crystal Growth（2019）

引用 2|浏览19

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摘要

•Capability to monitor growth rate of III-Nitrides, by MBE, at any point during the growth of the film or device structure.•Innovative differential analysis method which increases accuracy (reduces error) by more than 2x over previous methods.•Measurement of the Ga adlayer thickness made by RHEED Intensity analysis for the first time.

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关键词

A3. Molecular Beam Epitaxy,B1. Nitrides,A1. High resolution X-ray diffraction,A3. RHEED,B2. Semiconducting gallium compounds

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