Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 μm, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is ~3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.