Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
Journal of Crystal Growth(2019)
摘要
•Increased effective ambient temperature ensures growth of vacancy-rich crystals.•The influence of thermal stresses on point defects is stronger for large crystals.•The pull rate drop increases crystal radius, so the heater power has to be adjusted.•A good agreement with experiment is achieved for 50, 100 and 200 mm crystals.
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关键词
A1. Computer simulation,A1. Heat transfer,A1. Point defects,A1. Thermal stresses,A2. Czochralski method,B2. Semiconducting silicon
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