Modeling Non-Idealities Of Capacitive Rf-Dacs With A Switched State-Space Model

This paper presents extensions to the switched state-space modeling approach for capacitive RF-DACs. In contrast to other state-of-the-art behavioral models for nonlinear devices, the state-space representation allows for inclusion of the dominant non-idealities of the capacitive RF-DAC, while maintaining the original benefits of low computational effort and low simulation run times. In this work, the inclusion of capacitor variations, supply voltage variations, and local oscillator phase noise into the switched state-space model is demonstrated and verified.