55nm Ultra-low Power (55ULP) Automotive Grade HD SRAM with Sub 0.7V 16Mb Vmin

Thanh Hoa Phung,Hari Balan,Sriram Balasubramanian, Zeng-Yuan Wu,Patrick Khoo,Chor Shu Cheng, Tze Ho Chan

2019 Electron Devices Technology and Manufacturing Conference (EDTM)（2019）

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摘要

This work reports a 55nm planar-bulk automotive grade high density (HD) 0.425 $\mu$m ² SRAM cell for use in Ultra Low power (ULP) applications. Excellent Vmin of 0.68V for 95% limited Yield (LY) has been demonstrated on 16Mb array without the use of design assist techniques. The 55ULP HD cell’s standby power is among best in class values reported for foundry offerings. The cell fully qualified the stringent automotive grade 1000 hours of HTOL reliability testing.

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关键词

Random access memory,MOS devices,Transistors,Implants,Automotive engineering,Optimization,Boron

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