Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits. Instead of introducing effective field into the device, in this work we present an alternative way to achieve the field-free current-driven magnetization switching. By adding Tb/Co multilayers at two ends of the current channel, assisting domain wall is created by interlayer exchange coupling. The field-free deterministic switching is achieved by the movement of the domain wall driven by current. By loop shift measurement we find the driven force exerted on the domain wall is determined by the direction of the in-plane moment in the domain wall. Finally, we modify the device into a synthetic antiferromagnetic structure to solve the problem of reading out signal. The present work broadens the choice of field-free spin-orbit torque device design and clearly depicts the difference between two different switching mechanism.