High-performance Nano-floating Gate Memory Based on Lead Halide Perovskite Nanocrystals.

Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nano-floating gate memories (NFGMs). CHNHPbBr nanocrystals (NCs) were uniformly decorated on CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR-CHNHPbBr NCs core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CHNHPbBr NCs, the hybrid device possessed an ultra-large memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7×10, and a long-term air stability for 50 days. Memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.