Intermodulation Linearity Characteristics of 14-nm RF FinFETs

Jiabi Zhang,Guofu Niu,Will Cai,Weike Wang,Kimihiko Imura

IEEE Transactions on Electron Devices（2019）

引用 9|浏览6

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摘要

This paper investigates the RF intermodulation characteristics of transistors from a 14-nm RF FinFET technology using experimental measurements, circuit simulation with Berkeley short-channel IGFET model-common multi-gate (BSIM-CMG), and Volterra series. Linearity sweet spots with respect to gate voltage and RF power, as well as its drain voltage dependence, are examined. Key BSIM-CMG model parame...

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关键词

Radio frequency,Logic gates,Scattering parameters,Integrated circuit modeling,Capacitance,FinFETs

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