Direct Growth Of Large-Area Graphene By Cross-Linked Parylene Graphitization Toward Photodetection

2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2019)

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摘要
Large area uniform graphene was directly grown on insulating substrate by cross-linked Parylene graphitization. The as-grown graphene was used for the fabrication of graphene-Si Schottky junction photodetector with a responsivity of 275.9 mA/W. (C) 2019 The Author(s)
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关键词
graphene-Si Schottky junction photodetector,insulating substrate,cross-linked parylene graphitization,C-Si
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