W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region
2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)(2019)
摘要
Advanced SiGe HBTs maintain quite reasonable performance even at a forward biased base-collector junction. The associated operation in saturation enables a significant reduction in power consumption. One goal of this work is the exploration of mm-wave circuits with lowest possible power consumption while maintaining reasonable performance for possible integration into mobile systems where battery lifetime is of utmost importance. A second goal is the evaluation of HBT compact models in saturation and under realistic circuit operation. This paper presents the measured and simulated results of a narrow-band and a wide-band low-noise amplifier (LNA), both operating in the W-band. The supply voltage of the narrow-band LNA is as low as 0.5V.
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关键词
compact modeling,millimeter-wave circuit design,low-power,SiGe HBT
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