Memristors based on amorphous ZnSnO films

Bojing Lu,Yangdan Lu,Hangjian Zhu,Jiaqi Zhang,Shilu Yue,Siqin Li,Fei Zhuge,Zhizhen Ye,Jianguo Lu

Materials Letters（2019）

引用 19|浏览15

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摘要

•Memristors based on indium-free amorphous oxide semiconductor are fabricated.•Stable and reliable resistive switching behaviors exist in a-ZnSnO memristors.•The ratio of high-resistance and low-resistance states is as high as 103.

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关键词

Amorphous materials,Thin films,ZnSnO,Memristor,Resistive switching behavior,Memory

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