Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Katsuhiro Kutsuki,Yukihiko Watanabe,Yusuke Yamashita,Narumasa Soejima,Keita Kataoka,Toru Onishi,Kensaku Yamamoto,Hirokazu Fujiwara

Solid-State Electronics（2019）

引用 6|浏览11

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摘要

•Investigation and modeling of channel mobility in SiC trench MOSFETs are performed.•Channel mobility needs to be evaluated with drift layer resistance removed.•Method for evaluating channel mobility of trench MOSFETs with drift layer is proposed.•Proposed carrier scattering mechanism is not affected by the plane orientation of SiC.

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关键词

SiC,MOSFET,Trench,Mobility,Carrier scattering

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