Modulation of crystal structure and electrical properties of Hf0.6Zr0.4O2 thin films by Al-doping

•The structural and electrical properties of Al-doped HfZrO2 films were investigated.•The dielectric constant of HfZrO2 films were increased to ∼47 by Al doping (∼2.5%).•The polarization phase was modified from ferroelectric to paraelectric by Al doping.•Al-doped HfZrO2 films can be promising candidates for use as paraelectric high-k dielectrics.