Low-Crosstalk Silicon Nitride Arrayed Waveguide Grating for the 800-nm Band

We present a silicon nitride (Si _x N _y ) arrayed waveguide grating (AWG). Crosstalk in this AWG was reduced by decreasing the phase error in a multimode arrayed waveguide (WG) at center wavelength of 838 nm. 8-channel Si _x N _y AWGs using arrayed WGs with double-etched inverse-tapered WG structure and cross-sectional area of $1.5 \times 1.5\,\,\mu \text{m}^{{2}}$ were fabricated. The AWG exhibited less than −29.6-dB crosstalk with 0.43-dB insertion loss for transverse electric (TE) polarization.