Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers.

Influence of barrier material and structure on carrier quantum confinement in GaAsBi quantum wells (QWs) is studied comprehensively. Single- and multi-QW structures were grown using solid-state molecular beam epitaxy with conventional rectangular, step-like and parabolically graded AlGaAs barrier designs. It was discovered that room temperature photoluminescence is increased by more than 50 times in the GaAsBi QWs with parabolically graded barriers (PGBs) if compared to standard rectangular and step-like structures. The enhancement of photoluminescence was reproducible within the range of growth parameters. The carrier localization and increase of trapping efficiency in GaAsBi QWs is responsible for observed enhancement in radiative properties of PGB structures. The random potential field fluctuations for carriers were increased up to 44. meV due to the blurred well-barrier interface causing the conditions for Bi content and/or well width variations. Due to the impact of self-organizing effects on the reproducibility of optical properties, the GaAsBi QWs with AlGaAs PGBs open the window for fabrication of 1.0-1.55 mu m wavelength emission lasers based on GaAsBi quantum structures.