Biexciton in one-dimensional Mott insulators

T. Miyamoto, T. Kakizaki,T. Terashige, D. Hata, H. Yamakawa,T. Morimoto,N. Takamura,H. Yada, Y. Takahashi, T. Hasegawa, H. Matsuzaki,T. Tohyama,H. Okamoto

Communications Physics(2019)

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摘要
Mott insulators sometimes show dramatic changes in their electronic states after photoirradiation, as indicated by photoinduced Mott-insulator-to-metal transition. In the photoexcited states of Mott insulators, electron wave functions are more delocalized than in the ground state, and long-range Coulomb interactions play important roles in charge dynamics. However, their effects are difficult to discriminate experimentally. Here, we show that in a one-dimensional Mott insulator, bis(ethylenedithio)tetrathiafulvalene-difluorotetracyanoquinodimethane (ET-F 2 TCNQ), long-range Coulomb interactions stabilize not only excitons, doublon-holon bound states, but also biexcitons. By measuring terahertz-electric-field-induced reflectivity changes, we demonstrate that odd- and even-parity excitons are split off from a doublon-holon continuum. Further, spectral changes of reflectivity induced by a resonant excitation of the odd-parity exciton reveals that an exciton-biexciton transition appears just below the exciton-transition peak. Theoretical simulations show that long-range Coulomb interactions over four sites are necessary to stabilize the biexciton. Such information is indispensable for understanding the non-equilibrium dynamics of photoexcited Mott insulators.
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Electronic properties and materials,Optical physics,Physics,general
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