Extraction of J - V , G/ω - V - f and C - V - f Characteristics for p -Type Silicon/Intrinsic Ultrananocrystalline Diamond/ n -Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes.

The production of p-type silicon/intrinsic ultrananocrystalline diamond/n-type nanocrystalline iron disilicide heterojunction devices was conducted via coaxial arc plasma deposition and pulsed laser deposition. The results of current density-voltage (J-V) curves justified a large leakage current along with minimal response under illumination. A recombination process controls the mechanism for carrier portage in the zone of V <= 0.16 V, while a space-charge-limited current process governs the carrier portage mechanism in the circumstance of V value beyond 0.16 V. Frequency (f) dependent conductance (G/omega)-V and capacitance (C)-V curves were measured to extract the series resistance (R-s) and density of the interface state (N-ss). On the basis of extraction in the manner of Nicollian-Brews, the value of R-s rose with f abatement. With zero bias voltage applied, the value of R-s was 189.84 Omega at 2 MHz and rose to 715.10 Omega at 20 kHz. The acquired R-s may be attributable to the occurrence of R-s in the neutral zones as well as Ohmic contact. The values for N-ss, which were extracted in the manner of Hill-Coleman, were 1.23 x 10(11) eV(-1) cm(-2) at 2 MHz and 6.51 x 10(12) eV(-1) cm(-2) at 20 kHz. This result was an indicator of the occurrence of interface states at the zone of the junction interface performing as a source of leakage current and a trap center for the carriers originated by light.