B-open: A New Defect in Nanometer Technologies Due to SADP Process

In this paper, we analyze the electrical behavior of a new type of technological defect appearing in the most recent technological process achieving extremely high interconnection density by using the Self-Aligned Double Patterning technique (SADP). This totally new defect mechanism, which could not appear in conventional CMOS technologies, is structurally dependent of the SADP technique and can be considered as a simultaneous combination of Bridge and Open: we consequently named it B-open. The electrical behavior of the B-Open defect is analyzed and shown that the defect exhibits some classical electrical characteristics of Bridge defect and Open defect but also an unprecedented electrical mixed behavior of both defects.