Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

R. C. Harrington,J. S. Kauppila,J. A. Maharrey,T. D. Haeffner,A. L. Sternberg,E. X. Zhang,D. R. Ball,P. Nsengiyumva,B. L. Bhuva,L. W. Massengill

IEEE Transactions on Nuclear Science（2019）

引用 9|浏览53

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摘要

At the 14-/16-nm FinFET technology node, experimental heavy-ion single-event upset (SEU) cross sections have been obtained for a D flip-flop (DFF) with variation in supply voltage over a wide range of particle linear energy transfer (LET). An empirical model for predicting the SEU cross section as a function of supply voltage based on experimental data has been developed and verified. The results ...

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关键词

Single event upsets,FinFETs,Integrated circuit modeling,Flip-flops,Radiation effects,Mathematical model

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