Formation of new MXene film using spinning coating method with DMSO solution and its application in advanced memristive device

Uniform MXene films have been successfully achieved by tuning the process conditions and concentration of Ti3C2 in various solutions. Three different processing methods, i.e. mechanical exfoliation, dipping on wafer, and spin-coating technique, have been investigated in details. In addition, optimized conditions of concentration and dispersion of Ti3C2 in various solutions have been explored as well as spinning speed of spin coater. Next, the physical characteristics of MXene films were investigated and analyzed by optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) measurements. Moreover, the MXene films have been introduced into silicon-based devices using conventional semiconductor processing steps. For the first time, two-terminal memristive devices with MXene layers were fabricated. Electrical characteristics has been carefully measured and non-linear I-V behavior with continuous resistance states was observed. This work may pave the way for the applications of MXene in the Non-von Neumann architecture of brain-inspired semiconductor devices and networks.