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Single-Element Phase Change Memory

International Memory Workshop(2019)

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摘要
Phase Change Memory ( PCM) is a mature technology that is commercially available for several years now, e.g. in form of the 3D-Xpoint by Intel and Micron. Further spatial scaling towards higher device density promises better performance. At the same time, it further aggravates fundamental issues that have regularly been reported over the past years. The functional principle of PCM involves not only the application of high electric fields but also heating of the active material above its melting point. Under these harsh operating conditions, the different chemical elements are found to segregate and alter away from the fine-tuned original composition with its specific set of electrical switching properties. Such segregation problems can be resolved if the phase change material is radically simplified from a commonly quaternary alloy into a pure chemical element. This presentation discusses various aspects that ought to be considered in such an endeavor.
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关键词
PCM,spatial scaling,functional principle,high electric fields,active material,melting point,harsh operating conditions,fine-tuned original composition,electrical switching properties,phase change material,pure chemical element,quaternary alloy,single-element phase change memory,device density
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