A Snapback Suppressed Base Resistance Controlled Thyristor with Double N-type Buried Layer

A new base resistance controlled thyristor with double N-type buried layer (DNBL-BRT) is proposed in this paper. In the new structure, the left N-buried layer introduces an electron potential trap to extract electron current into thyristor, then effective thyristor trigger current is enhanced. Meanwhile, the right N-buried layer acts as a hole potential barrier to push hole current into P-base region, then parasitic PNP is suppressed and hole current density in P-base region is improved. Snapback phenomenon is significantly suppressed. Numerical simulation results show that, snapback-free can be realized when the doping level of N-buried layers is 1.0 × 10 ¹⁵ cm ^-3 and the distance between the two N-buried layers is 1.5 μm, meanwhile high blocking capability is maintained.